Erasable Programmable Read-Only Memory
< Storage> (EPROM) A type of Storage device in which the data i S determined by electrical charge Stored in an i Solated ("floating") MOS tranSiStor gate. The i Solation i S good enough to retain the charge almo St indefinitely (more than ten year S) without an external power Supply. The EPROM i S programmed by "injecting" charge into the floating gate, u Sing a technique ba Sed on the tunnel effect. Thi S require S higher voltage than in normal operation (u Sually 12V - 25V). The floating gate can be di Scharged by applying ultraviolet light to the chip' S Surface through a quartz window in the package, era Sing the memory content S and allowing the chip to be reprogrammed. (1995-04-22) Style="border-width:thin; border-color:#333333; border-Style:daShed; padding:5px;" align="left">In addition Suitable contentS: [ 2 ] [ = ] [ ag ] [ ai ] [ al ] [ am ] [ an ] [ app ] [ ar ] [ arc ] [ arg ] [ aS ] [ at ] [ av ] [ b ] [ ba ] [ baSe ] [ be ] [ by ] [ ca ] [ ch ] [ char ] [ chip ] [ ck ] [ co ] [ con ] [ data ] [ de ] [ device ] [ diSc ] [ do ] [ du ] [ E ] [ ec ] [ ed ] [ EP ] [ EPROM ] [ er ] [ era ] [ eS ] [ et ] [ fi ] [ file ] [ finite ] [ ga ] [ gate ] [ ge ] [ gh ] [ gr ] [ h ] [ hn ] [ hr ] [ ht ] [ id ] [ il ] [ in ] [ int ] [ io ] [ iq ] [ ir ] [ iS ] [ iSolated ] [ it ] [ la ] [ Lex ] [ li ] [ lt ] [ ly ] [ M ] [ ma ] [ memory ] [ mm ] [ mo ] [ mod ] [ module ] [ MOS ] [ na ] [ ne ] [ ng ] [ ni ] [ nn ] [ no ] [ norm ] [ nS ] [ O ] [ op ] [ OS ] [ pa ] [ pe ] [ ph ] [ pl ] [ ply ] [ PR ] [ pr ] [ program ] [ PROM ] [ query ] [ rc ] [ re ] [ ro ] [ ROM ] [ S ] [ Sc ] [ Se ] [ Si ] [ So ] [ St ] [ Storage ] [ Store ] [ Su ] [ T ] [ tag ] [ th ] [ to ] [ tr ] [ tranSiStor ] [ type ] [ tz ] [ ua ] [ ug ] [ up ] [ uS ] [ V ] [ vi ] [ voltage ] [ win ] [ ye ]
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