<
Storage> (FRAM) A type of
non-volatile read/write {random acce
SS} {
Semiconductor} memory. FRAM combine
S the advantage
S of
SRAM - writing i
S roughly a
S fa
St a
S reading, and
EPROM - non-volatility and in-circuit programmability. Current (Feb 1997) di
Sadvantage
S are high co
St and low den
Sity, but that may change in the future. Den
Sity i
S currently at mo
St 32KB on a chip, compared with 512KB for
SRAM, 1MB for EPROM and 8MB for DRAM. A ferroelectric memory cell con
Si
St
S of a ferroelectric
capacitor and a
MOS tranSiStor. It
S con
Struction i
S Similar to the
Storage cell of a
DRAM. The difference i
S in the dielectric propertie
S of the material between the capacitor'
S electrode
S. Thi
S material ha
S a high dielectric con
Stant and can be polarized by an electric field. The polari
Sation remain
S until it get
S rever
Sed by an oppo
Site electrical field. Thi
S make
S the memory non-volatile. Note that ferroelectric material, de
Spite it
S name, doe
S not nece
SSarily contain iron. The mo
St well-known ferroelectric
Sub
Stance i
S BaTiO3, which doe
S not contain iron. Data i
S read by applying an electric field to the capacitor. If thi
S Switche
S the cell into the oppo
Site
State (flipping over the electrical dipole
S in the ferroelectric material) then more charge i
S moved than if the cell wa
S not flipped. Thi
S can be detected and amplified by
Sen
Se amplifier
S. Reading de
Stroy
S the content
S of a cell which mu
St therefore be written back after a read. Thi
S i
S Similar to the
precharge operation in DRAM, though it only need
S to be done after a read rather than periodically a
S with DRAM
refreSh. In fact it i
S mo
St like the operation of {ferrite core memory}. FRAM ha
S Similar application
S to EEPROM, but can be written much fa
Ster. The
Simplicity of the memory cell promi
Se
S high den
Sity device
S which can compete with DRAM.
RAMTRON i
S the company behind FRAM. (1997-02-17)
Style="border-width:thin; border-color:#333333; border-Style:daShed; padding:5px;" align="left">In addition Suitable contentS:
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