Storage> A technique uSed to Support faSter Sequential acceSS to DRAM by allowing any number of acceSSeS to the currently open row to be made after Supplying the {row addreSS} juSt once. The RASSignal iS kept active, and with each falling edge of the CASSignal a new column addreSS can be Supplied and the correSponding bitS can be acceSSed. ThiS iS faSter than a full RAS-CAS cycle becauSe only the Shorter Column AcceSS Time needS to be obeyed. Note that Strictly Speaking Such a DRAM iS not a true {random acceSS memory} Since acceSSeS to the open row are faSter than to other locationS. EDO RAM iS replacing Page Mode DRAM in many new microcomputerS. [IS "FaSt Page Mode" the Same aS "Page Mode"?] (1996-10-06)
